Support ring for use with a contact pad and semiconductor device components including the same

ABSTRACT

Dielectric rings are configured to be disposed around contact pads on a surface of a semiconductor device or another substrate. The rings may be fabricated or otherwise disposed around the contact pads of a semiconductor device or other substrate before or after conductive structures, such as solder balls, are secured to the contact pads. Upon connecting the semiconductor device face-down to a higher level substrate and establishing electrical communication between contact pads of the semiconductor device and contacts pads of the substrate, the rings prevent the material of solder balls protruding from the semiconductor device from contacting regions of the surface of the semiconductor device that surround the contact pads thereof. The rings may be preformed structures or fabricated on the surface of the semiconductor device or other substrate. For example, stereolithographic techniques may be used to form the rings.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 10/413,865,filed Apr. 14, 2003, pending, which is a continuation of applicationSer. No. 09/934,917, filed Aug. 22, 2001, now U.S. Pat. No. 6,548,897,issued Apr. 15, 2003, which is a divisional of application Ser. No.09/589,842, filed Jun. 8, 2000, now U.S. Pat. No. 6,506,671, issued Jan.14, 2003.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor devices havingrings disposed about the peripheries of the contact pads thereof and,more specifically, to the use of stereolithography to fabricate suchrings around the contact pads either before or after securing solderballs to the contact pads. Particularly, the present invention pertainsto rings disposed about the peripheries of the contact pads of asemiconductor device component for enhancing the reliability of solderballs secured to the contact pads. The present invention also relates tosemiconductor device components including such rings.

2. Background of Related Art

Reliability of Solder Balls Used to Connect a Semiconductor DeviceFace-Down to a Higher Level Substrate

Some types of semiconductor devices, such as flip-chip typesemiconductor dice, including ball grid array (BGA) packages, andchip-scale packages (CSPs), can be connected to higher level substratesby orienting these semiconductor devices face down over the higher levelsubstrate. The contact pads of such semiconductor devices are typicallyconnected directly to corresponding contact pads of the higher levelsubstrate by solder balls.

Examples of solders that are known in the art to be useful in connectingsemiconductor devices face down to higher level substrates include, butare not limited to, lead-tin (Pb/Sn) solder and silver-nickel (Ag/Ni)solder. For example, 63/37 type Pb/Sn solder bumps (i.e., solder havingabout 63% by weight lead and about 37% by weight tin) and 95/5 typePb/Sn solder bumps (i.e., solder having about 95% by weight lead andabout 5% by weight tin) have been used in flip-chip, ball grid array,and chip-scale packaging type attachments.

Assemblies that include semiconductor devices connected face down tohigher level substrates using solder balls are subjected to thermalcycling during subsequent processing, testing thereof, and in normaluse. As these assemblies undergo thermal cycling, the solder ballsthereof are also exposed to wide ranges of temperatures, causing thesolder balls to expand when heated and contract when cooled. Suchexpansion and contraction is especially problematic at the interfacebetween a solder ball and the underlying contact pad. Expansion andcontraction of solder balls can also occur at the interface between asolder ball and the contact pad of a higher level substrate to which,for example, a die is secured. Repeated variations in temperatures cancause solder fatigue, which can reduce the strength of the solder balls,cause the solder balls to crack and fail, and diminish the reliabilityof the solder balls as mechanical and electrical connection elements.

In an attempt to increase the reliability with which solder ballsconnect semiconductor devices face down to higher level substrates,resins have been applied to semiconductor devices to form rings aroundthe bases of the solder balls protruding from the semiconductor devices.These resinous supports laterally contact the bases of the solder ballsto enhance the reliability thereof. The resinous supports are applied toa semiconductor device after solder balls have been secured to thecontact pads of the semiconductor device and before the semiconductordevice is connected face down to a higher level substrate. As those ofskill in the art are aware, however, the shapes of solder balls canchange when bonded to the contact pads of a substrate, particularlyafter reflow thereof. If the shapes of the solder balls change, thesolder balls can fail to maintain contact with the resinous supports,which could thereby fail to protect or enhance the reliability of thesolder balls.

The inventor is not aware of any art that discloses a method that can beused to fabricate support rings around the contact pads of asemiconductor device before, as well as after, solder balls are securedto the contact pads.

Stereolithography

In the past decade, a manufacturing technique termed“stereolithography,” also known as “layered manufacturing,” has evolvedto a degree where it is employed in many industries.

Essentially, stereolithography, as conventionally practiced, involvesutilizing a computer to generate a three-dimensional (3-D) mathematicalsimulation or model of an object to be fabricated, such generationusually effected with 3-D computer-aided design (CAD) software. Themodel or simulation is mathematically separated or “sliced” into a largenumber of relatively thin, parallel, usually vertically superimposedlayers, each layer having defined boundaries and other featuresassociated with the model (and thus the actual object to be fabricated)at the level of that layer within the exterior boundaries of the object.A complete assembly or stack of all of the layers defines the entireobject and surface resolution of the object is, in part, dependent uponthe thickness of the layers.

The mathematical simulation or model is then employed to generate anactual object by building the object, layer by superimposed layer. Awide variety of approaches to stereolithography by different companieshas resulted in techniques for fabrication of objects from both metallicand nonmetallic materials. Regardless of the material employed tofabricate an object, stereolithographic techniques usually involvedisposition of a layer of unconsolidated or unfixed materialcorresponding to each layer within the object boundaries. This isfollowed by selective consolidation or fixation of the material to atleast a partially consolidated, or semisolid, state in those areas of agiven layer corresponding to portions of the object, the consolidated orfixed material also at that time being substantially concurrently bondedto a lower layer of the object to be fabricated. The unconsolidatedmaterial employed to build an object may be supplied in particulate orliquid form and the material itself may be consolidated or fixed or aseparate binder material may be employed to bond material particles toone another and to those of a previously formed layer. In someinstances, thin sheets of material may be superimposed to build anobject, each sheet being fixed to a next lower sheet and unwantedportions of each sheet removed, a stack of such sheets defining thecompleted object. When particulate materials are employed, resolution ofobject surfaces is highly dependent upon particle size. When a liquid isemployed, surface resolution is highly dependent upon the minimumsurface area of the liquid which can be fixed and the minimum thicknessof a layer that can be generated. Of course, in either case, resolutionand accuracy of object reproduction from the CAD file is also dependentupon the ability of the apparatus used to fix the material to preciselytrack the mathematical instructions indicating solid areas andboundaries for each layer of material. Toward that end, and dependingupon the layer being fixed, various fixation approaches have beenemployed, including particle bombardment (electron beams), disposing abinder or other fixative (such as by ink-jet printing techniques), orirradiation using heat or specific wavelength ranges.

An early application of stereolithography was to enable rapidfabrication of molds and prototypes of objects from CAD files. Thus,either male or female forms on which mold material might be disposedmight be rapidly generated. Prototypes of objects might be built toverify the accuracy of the CAD file defining the object and to detectany design deficiencies and possible fabrication problems before adesign was committed to large-scale production.

In more recent years, stereolithography has been employed to develop andrefine object designs in relatively inexpensive materials and has alsobeen used to fabricate small quantities of objects where the cost ofconventional fabrication techniques is prohibitive for the same, such asin the case of plastic objects conventionally formed by injectionmolding. It is also known to employ stereolithography in the customfabrication of products generally built in small quantities or where aproduct design is rendered only once. Finally, it has been appreciatedin some industries that stereolithography provides a capability tofabricate products, such as those including closed interior chambers orconvoluted passageways, which cannot be fabricated satisfactorily usingconventional manufacturing techniques. It has also been recognized insome industries that a stereolithographic object or component may beformed or built around another, pre-existing object or component tocreate a larger product.

However, to the inventor's knowledge, stereolithography has yet to beapplied to mass production of articles in volumes of thousands ormillions, or employed to produce, augment or enhance products includingother, pre-existing components in large quantities, where minutecomponent sizes are involved, and where extremely high resolution and ahigh degree of reproducibility of results is required. In particular,the inventor is not aware of the use of stereolithography to fabricateperipheral rings around the contact pads of semiconductor devices, suchas flip-chip type semiconductor devices or ball grid array packages.Furthermore, conventional stereolithography apparatus and methods failto address the difficulties of precisely locating and orienting a numberof pre-existing components for stereolithographic application ofmaterial thereto without the use of mechanical alignment techniques orto otherwise assuring precise, repeatable placement of components.

SUMMARY OF THE INVENTION

The present invention includes a dielectric ring that surrounds theperiphery of a contact pad of a semiconductor device, semiconductordevice components including such rings, and methods for fabricating therings.

A ring incorporating teachings of the present invention surrounds theperiphery of a contact pad exposed at the surface of a semiconductordevice component, such as a semiconductor die, a chip-scale packagesubstrate, or a carrier substrate. The ring protrudes from the surfaceof the semiconductor device component. If the ring is fabricated beforea solder ball is secured to the contact pad, at least a portion of thesurrounded contact pad is exposed through an aperture defined by thering.

Since the ring protrudes from the surface of the semiconductor devicecomponent, when a solder ball is bonded or otherwise secured to thecontact pad exposed through the ring, the ring laterally surrounds atleast a portion of the solder ball. The ring is preferably configured tosubstantially conformably contact a solder ball surrounded thereby so asto laterally support at least the contacted portion of the solder ball.Such conformance is enhanced during reflow of the solder ball, where anysubstantial voids between the solder and the interior of the ring areeliminated. Accordingly, during thermal cycling of the semiconductordevice, the ring accommodates expansion and contraction of the solderball and, most particularly, the portion thereof that contacts and ismetallurgically secured to the underlying contact pad, the ring therebyreducing the occurrence of solder fatigue. In addition, use of ringsaccording to the present invention, which may be of substantial heightor protrusion from a substrate so as to encompass the solder balls at orapproaching their largest diameters, may eliminate the need for aninsulative underfill conventionally applied between a die and a higherlevel substrate.

Another significant advantage of the rings of the present invention isthe containment of the solder of the balls, in the manner of a dam,during solder reflow, thus preventing contamination of the passivationlayer surrounding the contact pads.

According to another aspect, the present invention includes a method forfabricating the ring. In a preferred embodiment of the method, acomputer-controlled, 3-D CAD-initiated process known as“stereolithography” or “layered manufacturing” is used to fabricate thering. When stereolithographic processes are employed, each ring isformed as either a single layer or a series of superimposed, contiguous,mutually adhered layers of material.

The stereolithographic method of fabricating the rings of the presentinvention preferably includes the use of a machine vision system tolocate the semiconductor devices or other substrates on which the ringsare to be fabricated, as well as the features or other components on orassociated with the semiconductor devices or other substrates (e.g.,solder bumps, contact pads, conductor traces, etc.). The use of amachine vision system directs the alignment of a stereolithographysystem with each semiconductor device or other substrate for materialdisposition purposes. Accordingly, the semiconductor devices or othersubstrates need not be precisely mechanically aligned with any componentof the stereolithography system to practice the stereolithographicembodiment of the method of the present invention.

In a preferred embodiment, the rings to be fabricated upon or positionedupon and secured to a semiconductor device component in accordance withthe invention are fabricated using precisely focused electromagneticradiation in the form of an ultraviolet (UV) wavelength laser undercontrol of a computer and responsive to input from a machine visionsystem, such as a pattern recognition system, to fix or cure selectedregions of a layer of a liquid photopolymer material disposed on thesemiconductor device or other substrate.

The rings of the present invention may be fabricated around the contactpads of the semiconductor device component either before or after solderballs are bonded or otherwise secured to the contact pads.

Other features and advantages of the present invention will becomeapparent to those of skill in the art through consideration of theensuing description, the accompanying drawings, and the appended claims.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings illustrate exemplary embodiments of theinvention, wherein some dimensions may be exaggerated for the sake ofclarity, and wherein:

FIG. 1 is an enlarged perspective view of a semiconductor device havingrings positioned around the exposed contact pads thereof;

FIG. 2 is a cross-section taken along line 2-2 of FIG. 1, depicting theapertures of the rings;

FIG. 3 is a cross-sectional view illustrating the face-down connectionof the semiconductor device of FIGS. 1 and 2 to a higher levelsubstrate;

FIG. 4 is an enlarged perspective view of another semiconductor devicehaving rings positioned around the contact pads thereof, each ringlaterally surrounding a portion of a solder ball bonded to thesurrounded contact pad;

FIG. 5 is a cross-section taken along line 5-5 of FIG. 4, depictingsolder balls extending through and laterally supported by the rings;

FIG. 6 is a cross-sectional view illustrating the face-down connectionof the semiconductor device of FIGS. 4 and 5 to a higher levelsubstrate;

FIG. 7 is a perspective view of a portion of a wafer having a pluralityof semiconductor devices thereon, depicting rings being fabricatedaround each of the contact pads of the semiconductor devices at thewafer level;

FIG. 8 is a schematic representation of an exemplary stereolithographyapparatus that can be employed in the method of the present invention tofabricate the rings of the present invention; and

FIG. 9 is a partial cross-sectional side view of a semiconductor devicedisposed on a platform of a stereolithographic apparatus for theformation of rings around the contact pads of the semiconductor device.

DETAILED DESCRIPTION OF THE INVENTION

Rings. With reference to FIGS. 1 and 2, a semiconductor device 10 havingcontact pads 12 on a surface 14 thereof is illustrated. Semiconductordevice 10 can be a semiconductor die, partial wafer, wafer, or otherlarge-scale substrate of semiconductor material, a chip-scale package, aball grid array package, a carrier substrate, or any other type ofsemiconductor device component having contact pads to which solder ballscan be attached.

As illustrated, a ring 50 surrounds the periphery of each contact pad12. Each ring 50 defines an aperture 52 through which at least a portionof the surrounded contact pad 12 is exposed. Each ring 50 protrudes fromsurface 14 of semiconductor device 10 so as to laterally surround andcontact at least a portion of a solder ball to be bonded or otherwisesecured to bond pad 12 and to support that portion of the solder ball toprevent fatigue thereof during thermal cycling of semiconductor device10.

Referring now to FIG. 3, semiconductor device 10 is shown in a face-downorientation over a higher level substrate 30. Substrate 30 has contactpads or terminals 32 exposed at a surface 34 thereof. Contact pads 32are preferably arranged so as to align with corresponding ones ofcontact pads 12 upon positioning semiconductor device 10 face down oversubstrate 30. Each contact pad 12 of semiconductor device 10 iselectrically connected to its corresponding contact pad 32 of substrate30 by way of a solder ball 20.

As will be explained in greater detail below, rings 50 are at leastpartially fabricated prior to connecting solder balls 20 to contact pads12. As depicted in FIG. 3, a base portion 22 of each solder ball 20,which is bonded or otherwise secured to the contact pad 12 exposedthrough aperture 52 of ring 50, has a shape that is complementary to theconfiguration of aperture 52. Thus, each ring 50 contacts the solderball 20 that extends through aperture 52.

With continued reference to FIG. 3, semiconductor device 10 is connectedface down to a higher level substrate 30, such as a carrier substrate.Solder balls 20 connect contact pads 12 of semiconductor device 10 tocorresponding contact pads 32 exposed at surface 34 of substrate 30.Rings 50 contact solder balls 20 so as to laterally support and protectat least the contacted portions of solder balls 20.

As depicted in FIG. 3, rings 54 can also be secured or formed aroundcontact pads 32 of substrate 30. Rings 54 contact and laterally supportthe contacted portions of solder balls 20 so as to accommodate expansionand contraction of at least the portions of solder balls 20 contactingcontact pads 32 during testing or use of semiconductor device 10 and to,therefore, prevent solder fatigue at the interface between solder balls20 and contact pads 32.

FIGS. 4 and 5 illustrate another semiconductor device 10, which hassolder balls 20′ protruding from each of the contact pads 12 on thesurface 14 thereof. The portion of each solder ball 20′ adjacent surface14 and the periphery of each bond pad 12 is laterally surrounded byanother embodiment of ring 50′, which protrudes from surface 14. Rings50′ are fabricated after solder balls 20′ have been secured to contactpads 12.

As shown in FIG. 5, solder ball 20′ extends through an aperture 52′ ofring 50′ to contact pad 12. Ring 50′ contacts the sides of the portionof solder ball 20′ extending through aperture 52′. FIG. 5 also depictsportions of ring 50′ located beneath solder ball 20′. These portions ofring 50′ are referred to herein as “shadowed” areas 54′.

Turning now to FIG. 6, semiconductor device 10 is depicted as beinginvertedly disposed over and connected to a higher level substrate 30.Solder balls 20′ connect each contact pad 12 of semiconductor device 10to a corresponding contact pad 32 exposed at a surface 34 of substrate30. As depicted, rings 50′ prevent material of solder balls 20′ fromcontacting surface 14 of semiconductor device 10.

FIG. 7 illustrates rings 50 on semiconductor devices 10, in this casesemiconductor dice that have yet to be singulated, or diced, from awafer 72 or from a portion of a wafer 72. Each semiconductor device 10on wafer 72 is separated from adjacent semiconductor devices 10 by astreet 74.

While rings 50, 50′ are preferably substantially simultaneouslyfabricated on or secured to a collection of semiconductor devices 10,such as prior to singulating semiconductor dice from a wafer 72, rings50, 50′ can also be fabricated on or secured to collections ofindividual semiconductor devices 10 or other substrates, such assubstrate 30 (on which rings 54 would be fabricated), or to individualsemiconductor devices 10 or other substrates. As another alternative,rings 50, 50′ can be substantially simultaneously fabricated on orsecured to a collection of more than one type of semiconductor device 10or other substrate (e.g., rings 54 on substrate 30).

Rings 50, 50′ can be fabricated directly on semiconductor devices 10.Alternatively, rings 50 and can be fabricated separately fromsemiconductor devices 10, then secured thereto as known in the art, suchas by the use of a suitable adhesive.

Rings 50, 50′ are preferably fabricated from a photo-curable polymer, or“photopolymer,” by stereolithographic processes. When fabricateddirectly on a semiconductor device 10, rings 50, 50′ can be made eitherbefore or after solder balls 20, 20′ are connected to contact pads 12 ofsemiconductor device 10.

For simplicity, the ensuing description is limited to an explanation ofa method of fabricating rings 50 on a semiconductor device 10 prior tosecuring solder balls 20 to contact pads 12 of semiconductor device 10.As should be appreciated by those of skill in the art, however, themethod described herein is also useful for fabricating rings 50′ onsemiconductor device 10 and for fabricating rings 54 on substrate 30, aswell as for fabricating rings 50′ on one or more semiconductor devices10 or other substrates having solder balls 20′ already secured to thecontact pads 12 thereof.

Stereolithography Apparatus and Methods. FIG. 8 schematically depictsvarious components and operation of an exemplary stereolithographyapparatus 80 to facilitate the reader's understanding of the technologyemployed in implementation of the method of the present invention,although those of ordinary skill in the art will understand andappreciate that apparatus of other designs and manufacture may beemployed in practicing the method of the present invention. Thepreferred, basic stereolithography apparatus for implementation of themethod of the present invention, as well as operation of such apparatus,are described in great detail in United States Patents assigned to 3DSystems, Inc., of Valencia, Calif., such patents including, withoutlimitation, U.S. Pat. Nos. 4,575,330; 4,929,402; 4,996,0,10; 4,999,143;5,015,424; 5,058,988; 5,059,021; 5,059,359; 5,071,337; 5,076,974;5,096,530; 5,104,592; 5,123,734; 5,130,064; 5,133,987; 5,141,680;5,143,663; 5,164,128; 5,174,931; 5,174,943; 5,182,055; 5,182,056;5,182,715; 5,184,307; 5,192,469; 5,192,559; 5,209,878; 5,234,636;5,236,637; 5,238,639; 5,248,456; 5,256,340; 5,258,146; 5,267,013;5,273,691; 5,321,622; 5,344,298; 5,345,391; 5,358,673; 5,447,822;5,481,470; 5,495,328; 5,501,824; 5,554,336; 5,556,590; 5,569,349;5,569,431; 5,571,471; 5,573,722; 5,609,812; 5,609,813; 5,610,824;5,630,981; 5,637,169; 5,651,934; 5,667,820; 5,672,312; 5,676,904;5,688,464; 5,693,144; 5,695,707; 5,711,911; 5,776,409; 5,779,967;5,814,265; 5,850,239; 5,854,748; 5,855,718; 5,855,836; 5,885,511;5,897,825; 5,902,537; 5,902,538; 5,904,889; 5,943,235; and 5,945,058.The disclosure of each of the foregoing patents is hereby incorporatedherein by this reference.

With continued reference to FIG. 8 and as noted above, a 3-D CAD drawingof an object to be fabricated in the form of a data file is placed inthe memory of a computer 82 controlling the operation of apparatus 80 ifcomputer 82 is not a CAD computer in which the original object design iseffected. In other words, an object design may be effected in a firstcomputer in an engineering or research facility and the data filestransferred via wide or local area network, tape, disc, CD-ROM, orotherwise, as known in the art to computer 82 of apparatus 80 for objectfabrication.

The data is preferably formatted in an STL (for STereoLithography) file,STL being a standardized format employed by a majority of manufacturersof stereolithography equipment. Fortunately, the format has been adoptedfor use in many solid-modeling CAD programs, so translation from anotherinternal geometric database format is often unnecessary. In an STL file,the boundary surfaces of an object are defined as a mesh ofinterconnected triangles.

Apparatus 80 also includes a reservoir 84 (which may comprise aremovable reservoir interchangeable with others containing differentmaterials) of an unconsolidated material 86 to be employed infabricating the intended object. In the currently preferred embodiment,the unconsolidated material 86 is a liquid, photo-curable polymer, or“photopolymer,” that cures in response to light in the UV wavelengthrange. The surface level 88 of material 86 is automatically maintainedat an extremely precise, constant magnitude by devices known in the artresponsive to output of sensors within apparatus 80 and preferably undercontrol of computer 82. A support platform or elevator 90, preciselyvertically movable in fine, repeatable increments in direction 116responsive to control of computer 82, is located for movement downwardinto and upward out of material 86 in reservoir 84.

An object may be fabricated directly on platform 90 or on a substratedisposed on platform 90. When the object is to be fabricated on asubstrate disposed on platform 90, the substrate may be positioned onplatform 90 and secured thereto by way of one or more base supports 122(see FIG. 9). Such base supports 122 may be fabricated before orsimultaneously with the stereolithographic fabrication of one or moreobjects on platform 90 or a substrate disposed thereon. These supports122 may support, or prevent lateral movement of, the substrate relativeto a surface 100 of platform 90. Supports 122 may also provide aperfectly horizontal reference plane for fabrication of one or moreobjects thereon, as well as facilitate the removal of a substrate fromplatform 90 following the stereolithographic fabrication of one or moreobjects on the substrate. Moreover, where a so-called “recoater” blade102 is employed to form a layer of material on platform 90 or asubstrate disposed thereon, supports 122 can preclude inadvertentcontact of recoater blade 102, to be described in greater detail below,with surface 100 of platform 90.

Apparatus 80 has a UV wavelength range laser plus associated optics andgalvanometers (collectively identified as laser 92) for controlling thescan of laser beam 96 in the X-Y plane across platform 90. Laser 92 hasassociated therewith a mirror 94 to reflect beam 96 downwardly, as beam98, toward surface 100 of platform 90. Beam 98 is traversed in aselected pattern in the X-Y plane, that is to say, in a plane parallelto surface 100, by initiation of the galvanometers under control ofcomputer 82 to at least partially cure, by impingement thereon, selectedportions of material 86 disposed over surface 100 to at least apartially consolidated (e.g., semisolid) state. The use of mirror 94lengthens the path of the laser beam, effectively doubling the same, andprovides a more vertical beam 98 than would be possible if the laser 92itself were mounted directly above platform surface 100, thus enhancingresolution.

Referring now to FIGS. 8 and 9, data from the STL files resident incomputer 82 is manipulated to build an object, such as ring 50,illustrated in FIGS. 1-3 and 7, or base supports 122, one layer at atime. Accordingly, the data mathematically representing one or more ofthe objects to be fabricated are divided into subsets, each subsetrepresenting a slice or layer of the object. The division of data iseffected by mathematically sectioning the 3-D CAD model into at leastone layer, a single layer or a “stack” of such layers representing theobject. Each slice may be from about 0.0001 to about 0.0300 inch thick.As mentioned previously, a thinner slice promotes higher resolution byenabling better reproduction of fine vertical surface features of theobject or objects to be fabricated.

When one or more base supports 122 are to be stereolithograph icallyfabricated, supports 122 may be programmed as a separate STL file fromthe other objects to be fabricated. The primary STL file for the objector objects to be fabricated and the STL file for base support(s) 122 aremerged.

Before fabrication of a first layer for a support 122 or an object to befabricated is commenced, the operational parameters for apparatus 80 areset to adjust the size (diameter if circular) of the laser light beamused to cure material 86. In addition, computer 82 automatically checksand, if necessary, adjusts, by means known in the art, the surface level88 of material 86 in reservoir 84 to maintain the same at an appropriatefocal length for laser beam 98. U.S. Pat. No. 5,174,931, referencedabove and previously incorporated herein by reference, discloses onesuitable level control system. Alternatively, the height of mirror 94may be adjusted responsive to a detected surface level 88 to cause thefocal point of laser beam 98 to be located precisely at the surface ofmaterial 86 at surface level 88 if surface level 88 is permitted tovary, although this approach is more complex. Platform 90 may then besubmerged in material 86 in reservoir 84 to a depth equal to thethickness of one layer or slice of the object to be formed, and theliquid surface level 88 is readjusted as required to accommodatematerial 86 displaced by submergence of platform 90. Laser 92 is thenactivated so laser beam 98 will scan unconsolidated (e.g., liquid orpowdered) material 86 disposed over surface 100 of platform 90 to atleast partially consolidate (e.g., polymerize to at least a semisolidstate) material 86 at selected locations, defining the boundaries of afirst layer 122A of base support 122 and filling in solid portionsthereof. Platform 90 is then lowered by a distance equal to thickness ofsecond layer 122B and laser beam 98 scanned over selected regions of thesurface of material 86 to define and fill in the second layer whilesimultaneously bonding the second layer to the first. The process maythen be repeated as often as necessary, layer by layer, until basesupport 122 is completed. Platform 90 is then moved relative to milTor94 to form any additional base supports 122 on platform 90 or asubstrate disposed thereon or to fabricate objects upon platform 90,base support 122, or a substrate, as provided in the control software.The number of layers required to erect support 122 or one or more otherobjects to be formed depends upon the height of the object or objects tobe formed and the desired layer thickness 108, 110. The layers of astereolithographically fabricated structure with a plurality of layersmay have different thicknesses.

If a recoater blade 102 is employed, the process sequence is somewhatdifferent. In this instance, surface 100 of platform 90 is lowered intounconsolidated (e.g., liquid) material 86 below surface level 88 adistance greater than a thickness of a single layer of material 86 to becured, then raised above surface level 88 until platform 90, a substratedisposed thereon, or a structure being formed on platform 90 or asubstrate thereon is precisely one layer's thickness below blade 102.Blade 102 then sweeps horizontally over platform 90 or (to save time) atleast over a portion thereof on which one or more objects are to befabricated to remove excess material 86 and leave a film of preciselythe desired thickness. Platform 90 is then lowered so that the surfaceof the film and material surface level 88 are coplanar and the surfaceof the unconsolidated material 86 is still. Laser 92 is then initiatedto scan with laser beam 98 and define the first layer 130. The processis repeated, layer by layer, to define each succeeding layer 130 andsimultaneously bond the same to the next lower layer 130 until all ofthe layers of the object or objects to be fabricated are completed. Amore detailed discussion of this sequence and apparatus for performingthe same is disclosed in U.S. Pat. No. 5,174,931, previouslyincorporated herein by reference.

As an alternative to the above approach to preparing a layer of material86 for scanning with laser beam 98, a layer of unconsolidated (e.g.,liquid) material 86 may be formed on surface 100 of support platform 90,on a substrate disposed on platform 90, or on one or more objects beingfabricated by lowering platform 90 to flood material 86 over surface100, over a substrate disposed thereon, or over the highest completedlayer of the object or objects being formed, then raising platform 90and horizontally traversing a so-called “meniscus” blade horizontallyover platform 90 to form a layer of unconsolidated material having thedesired thickness over platform 90, the substrate, or each of theobjects being formed. Laser 92 is then initiated and a laser beam 98scanned over the layer of unconsolidated material to define at least theboundaries of the solid regions the next higher layer of the object orobjects being fabricated.

Yet another alternative to layer preparation of unconsolidated (e.g.,liquid) material 86 is to merely lower platform 90 to a depth equal tothat of a layer of material 86 to be scanned, and to then traverse acombination flood bar and meniscus bar assembly horizontally overplatform 90, a substrate disposed on platform 90, or one or more objectsbeing formed to substantially concurrently flood material 86 thereoverand to define a precise layer thickness of material 86 for scanning.

All of the foregoing approaches to liquid material flooding and layerdefinition and apparatus for initiation thereof are known in the art andare not material to the practice of the present invention, therefore, nofurther details relating thereto will be provided herein.

In practicing the present invention, a commercially availablestereolithography apparatus operating generally in the manner as thatdescribed above with respect to apparatus 80 of FIG. 8 is preferablyemployed, but with further additions and modifications as hereinafterdescribed for practicing the method of the present invention. Forexample and not by way of limitation, the SLA-250/50HR, SLA-5000 andSLA-7000 stereolithography systems, each offered by 3D Systems, Inc., ofValencia, Calif., are suitable for modification. Photopolymers believedto be suitable for use in practicing the present invention includeCibatool SL 5170 and SL 5210 resins for the SLA-250/50HR system,Cibatool SL 5530 resin for the SLA-5000 and 7000 systems, and CibatoolSL 7510 resin for the SLA-7000 system. All of these photopolymers areavailable from Ciba Specialty Chemicals Inc.

By way of example and not limitation, the layer thickness of material 86to be formed, for purposes of the invention, may be on the order ofabout 0.0001 to 0.0300 inch, with a high degree of uniformity. It shouldbe noted that different material layers may have different heights so asto form a structure of a precise, intended total height or to providedifferent material thicknesses for different portions of the structure.The size of the laser beam “spot” impinging on the surface of material86 to cure the same may be on the order of 0.001 inch to 0.008 inch.Resolution is preferably ±0.0003 inch in the X-Y plane (parallel tosurface 100) over at least a 0.5 inch×0.25 inch field from a centerpoint, permitting a high resolution scan effectively across a 1.0inch×0.5 inch area. Of course, it is desirable to have substantiallythis high a resolution across the entirety of surface 100 of platform 90to be scanned by laser beam 98, such area being termed the “field ofexposure,” and being substantially coextensive with the vision field ofa machine vision system employed in the apparatus of the invention asexplained in more detail below. The longer and more effectively verticalthe path of laser beam 96/98, the greater the achievable resolution.

Referring again to FIG. 8, it should be noted that apparatus 80 usefulin the method of the present invention includes a camera 140 which is incommunication with computer 82 and preferably located, as shown, inclose proximity to optics and mirror 94 located above surface 100 ofsupport platform 90. Camera 140 may be any one of a number ofcommercially available cameras, such as capacitive-coupled discharge(CCD) cameras available from a number of vendors. Suitable circuitry asrequired for adapting the output of camera 140 for use by computer 82may be incorporated in a board 142 installed in computer 82, which isprogrammed as known in the art to respond to images generated by camera140 and processed by board 142. Camera 140 and board 142 may togethercomprise a so-called “machine vision system” and, specifically, a“pattern recognition system” (PRS), operation of which will be describedbriefly below for a better understanding of the present invention.Alternatively, a self-contained machine vision system available from acommercial vendor of such equipment may be employed. For example, andwithout limitation, such systems are available from Cognex Corporationof Natick, Mass. For example, the apparatus of the Cognex BGA InspectionPackage™ or the SMD Placement Guidance Package™ may be adapted to thepresent invention, although it is believed that the MVS-8000™ productfamily and the Checkpoint® product line, the latter employed incombination with Cognex PatMax™ software, may be especially suitable foruse in the present invention.

It is noted that a variety of machine vision systems are in existence,examples of which and their various structures and uses are described,without limitation, in U.S. Pat. Nos. 4,526,646; 4,543,659; 4,736,437;4,899,921; 5,059,559; 5,113,565; 5,145,099; 5,238,174; 5,463,227;5,288,698; 5,471,310; 5,506,684; 5,516,023; 5,516,026; and 5,644,245.The disclosure of each of the immediately foregoing patents is herebyincorporated by this reference.

Stereolithographic Fabrication of the Rings. In order to facilitatefabrication of one or more rings 50 in accordance with the method of thepresent invention with apparatus 80, a data file, representative of thesize, configuration, thickness and surface topography of, for example, aparticular type and design of semiconductor device 10 or other substrateupon which one or more rings 50 are to be mounted, is placed in thememory of computer 82. Also, if it is desired that the rings 50 be sopositioned on semiconductor device 10 taking into consideration featuresof a higher level substrate 30 (see FIG. 3) to which semiconductordevice 10 is to be connected, a data file representative of substrate 30and the features thereof may be placed in memory.

One or more semiconductor devices 10, wafers 72 (see FIG. 7), or othersubstrates may be placed on surface 100 of platform 90 for fabricationof rings 50 around contact pads 12 thereof. If one or more semiconductordevices 10, wafers 72, or other substrates are to be held on orsupported above platform 90 by stereolithographically formed basesupports 122, one or more layers of material 86 are sequentiallydisposed on surface 100 and selectively altered by use of laser 92 toform base supports 122.

Camera 140 is then activated to locate the position and orientation ofeach semiconductor device 10, including those on a wafer 72 (see FIG.7), or other substrate upon which rings 50 are to be fabricated. Thefeatures of each semiconductor device 10, wafer 72, or other substrateare compared with those in the data file residing in memory, thelocational and orientational data for each semiconductor device 10,wafer 72, or other substrate then also being stored in memory. It shouldbe noted that the data file representing the design, size, shape andtopography for each semiconductor device 10 or other substrate may beused at this juncture to detect physically defective or damagedsemiconductor devices 10 or other substrates prior to. fabricating rings50 thereon or before conducting further processing or assembly ofsemiconductor device 10 or other substrates. Accordingly, such damagedor defective semiconductor devices 10 or other substrates can be deletedfrom the process of fabricating rings 50, from further processing, orfrom assembly with other components. It should also be noted that datafiles for more than one type (size, thickness, configuration, surfacetopography) of each semiconductor device 10 or other substrate may beplaced in computer memory and computer 82 programmed to recognize notonly the locations and orientations of each semiconductor device 10 orother substrate, but also the type of semiconductor device 10 or othersubstrate at each location upon platform 90 so that material 86 may beat least partially consolidated by laser beam 98 in the correct patternand to the height required to define rings 50 in the appropriate,desired locations on each semiconductor device 10 or other substrate.

Continuing with reference to FIGS. 8 and 9, wafer 72 or the one or moresemiconductor devices 10 or other substrates on platform 90 may then besubmerged partially below the surface level 88 of liquid material 86 toa depth greater than the thickness of a first layer of material 86 to beat least partially consolidated (e.g., cured to at least a semisolidstate) to form the lowest layer 130 of each ring 50 at the appropriatelocation or locations on each semiconductor device 10 or othersubstrate, then raised to a depth equal to the layer thickness, surfacelevel 88 of material 86 being allowed to become calm. Photopolymers thatare useful as material 86 exhibit a desirable dielectric constant, lowshrinkage upon cure, are of sufficient (i.e., semiconductor grade)purity, exhibit good adherence to other semiconductor device materials,and have a similar coefficient of thermal expansion (CTE) to thematerial of solder balls 20 (FIG. 3) (e.g., solder or other metal ormetal alloy). As used herein, the term “solder ball” may also beinterpreted to encompass conductive or conductor filled epoxy.Preferably, the CTE of material 86 is sufficiently similar to that ofsolder balls 20 to prevent undue stressing thereof during thermalcycling of semiconductor device 10 or another substrate in testing,subsequent processing, and subsequent normal operation. Exemplaryphotopolymers exhibiting these properties are believed to include, butare not limited to, the above-referenced resins from Ciba SpecialtyChemicals Inc. One area of particular concern in determining resinsuitability is the substantial absence of mobile ions and, specifically,fluorides.

Laser 92 is then activated and scanned to direct beam 98, under controlof computer 82, toward specific locations of surface level 88 relativeto each semiconductor device 10 or other substrate to effect theaforementioned partial cure of material 86 to form a first layer 50A ofeach ring 50. Platform 90 is then lowered into reservoir 84 and raised adistance equal to the desired thickness of another layer 50B of eachring 50 and laser 92 is activated to add another layer 50B to each ring50 under construction. This sequence continues, layer by layer, untileach of the layers of rings 50 have been completed.

In FIG. 9, the first layer of ring 50 is identified by numeral 50A andthe second layer is identified by numeral 50B. Likewise, the first layerof base support 122 is identified by numeral 122A and the second layerthereof is identified by numeral 122B. As illustrated, both base support122 and ring 50 have only two layers. Rings 50 with any number of layersare, however, within the scope of the present invention. The use of alarge number of layers may be employed to substantially simulate thecurvature of a solder ball to be encompassed thereby.

Each layer 50A, 50B of ring 50 is preferably built by first defining anyinternal and external object boundaries of that layer with laser beam98, then hatching solid areas of ring 50 located within the objectboundaries with laser beam 98. An internal boundary of a layer maycomprise aperture 52, a through-hole, a void, or a recess in ring 50,for example. If a particular layer includes a boundary of a void in theobject above or below that layer, then laser beam 98 is scanned in aseries of closely-spaced, parallel vectors so as to develop a continuoussurface, or skin, with improved strength and resolution. The time ittakes to form each layer depends upon the geometry thereof, the surfacetension and viscosity of material 86, and the thickness of that layer.

Alternatively, rings 50 may each be formed as a partially cured outerskin extending above surface 14 of semiconductor device 10 forming a damwithin which unconsolidated material 86 can be contained. This may beparticularly useful where the rings 50 protrude a relatively highdistance 56 from surface 14. In this instance, support platform 90 maybe submerged so that material 86 enters the area within the dam, raisedabove surface level 88, and then laser beam 98 activated and scanned toat least partially cure material 86 residing within the dam or,alternatively, to merely cure a “skin” comprising the contact surfaceaperture 52, a final cure of the material of the rings 50 being effectedsubsequently by broad-source UV radiation in a chamber or by thermalcure in an oven. In this manner, rings 50 of extremely precisedimensions may be formed of material 86 by apparatus 80 in minimal time.

When rings 50′, depicted in FIGS. 4-6, are being fabricated on asubstrate, such as semiconductor device 10, having solder balls 20′already secured to the contact pads 12 thereof, some of material 86 maybe located in shadowed areas 54′ (see FIGS. 5 and 6) lying underportions of the substantially spherical solder balls 20′. As laser beam98 is directed substantially vertically downwardly toward surface level88 of material 86, material 86 located in shadowed regions 54′ will notbe contacted or altered by laser beam 98. Nonetheless, theunconsolidated material 86 in shadowed areas 54′ will become trappedtherein as material 86′ (see FIGS. 5 and 6) adjacent to and laterallyoutward from shadowed areas 54′ is at least partially. consolidated asring 50′ is built up around solder ball 20′. Such trapped,unconsolidated material 86′ will eventually cure due to thecross-linking initiated in the outwardly adjacent photopolymer and thecure can be subsequently accelerated and polymerized as known in theart, such as by a thermal cure.

Once rings 50, or at least the outer skins thereof, have beenfabricated, platform 90 is elevated above surface level 88 of material86 and platform 90 is removed from apparatus 80, along with anysubstrate (e.g., semiconductor device 10, wafer 72 (see FIG. 7), orother substrate) disposed thereon and any stereolithographicallyfabricated structures, such as rings 50. Excess, unconsolidated material86 (e.g., excess uncured liquid) may be manually removed from platform90, from any substrate disposed thereon, and from rings 50. Eachsemiconductor device 10, wafer 72, or other substrate is removed fromplatform 90, such as by cutting the substrate free of base supports 122.Alternatively, base supports 122 may be configured to readily releasesemiconductor devices 10, wafers 72, or other substrates. As anotheralternative, a solvent may be employed to release base supports 122 fromplatform 90. Such release and solvent materials are known in the art.See, for example, U.S. Pat. No. 5,447,822 referenced above andpreviously incorporated herein by reference.

Rings 50 and semiconductor device 10 may also be cleaned by use of knownsolvents that will not substantially degrade, deform, or damage rings 50or a substrate to which rings 50 are secured.

As noted previously, rings 50 may then require postcuring. Rings 50 mayhave regions of unconsolidated material contained within a boundary orskin thereof or in a shadowed area 54′ (see FIGS. 5 and 6), or material86 may be only partially consolidated (e.g., polymerized or cured) andexhibit only a portion (typically 40% to 60%) of its fully consolidatedstrength. Postcuring to completely harden rings 50 may be effected inanother apparatus projecting UV radiation in a continuous manner overrings 50 or by thermal completion of the initial, UV-initiated partialcure.

It should be noted that the height, shape, or placement of each ring 50on each specific semiconductor device 10 or other substrate may vary,again responsive to output of camera 140 or one or more additionalcameras 144, 146, or 148, shown in broken lines, detecting theprotrusion of unusually high (or low) preplaced solder balls which couldaffect the desired distance 56 that rings 50 will protrude from surface14. Likewise, the lateral extent (i.e., diameter) of each preplacedsolder ball may be recognized and the radial girth of the outer boundaryof each ring 50 adjusted accordingly. In any case, laser 92 is againactivated to at least partially cure material 86 residing on eachsemiconductor device 10 or other substrate to form the layer or layersof each ring 50.

Although FIGS. 8 and 9 illustrate the stereolithographic fabrication ofrings 50 on a substrate, such as a semiconductor device 10, a wafer 72(FIG. 7), or another substrate, including a plurality of semiconductordevices 10 or other substrates, rings 50 can be fabricated separatelyfrom a substrate, then secured to a substrate by known processes, suchas by the use of a suitable adhesive material.

The use of a stereolithographic process as exemplified above tofabricate rings 50 is particularly advantageous since a large number ofrings 50 may be fabricated in a short time, the ring height and positionare computer controlled to be extremely precise, wastage ofunconsolidated material 86 is minimal, solder coverage of passivationmaterials is avoided, and the stereolithography method requires minimalhandling of semiconductor devices 10, wafers 72, or other substrates.

Stereolithography is also an advantageous method of fabricating rings 50according to the present invention since stereolithography can beconducted at substantially ambient temperature, the small spot size andrapid traverse of laser beam 98 resulting in negligible thermal stressupon semiconductor devices 10, wafers 72, or other substrates, as wellas on the features thereof.

The stereolithography fabrication process may also advantageously beconducted at the wafer level or on multiple substrates, savingfabrication time and expense. As the stereolithography method of thepresent invention recognizes specific semiconductor devices 10 or othersubstrates 20, variations between individual substrates areaccommodated. Accordingly, when the stereolithography method of thepresent invention is employed, rings 50 can be simultaneously fabricatedon different types of semiconductor devices 10 or other substrates, aswell as on both semiconductor devices 10 and other substrates.

While the present invention has been disclosed in terms of certainpreferred embodiments, those of ordinary skill in the art will recognizeand appreciate that the invention is not so limited. Additions,deletions and modifications to the disclosed embodiments may be effectedwithout departing from the scope of the invention as claimed herein.Similarly, features from one embodiment may be combined with those ofanother while remaining within the scope of the invention.

1. A semiconductor device component, comprising: a substrate includingat least one contact pad exposed at a surface thereof; and at least onering positioned on the substrate with at least a portion of the at leastone contact pad being exposed therethrough, the at least one ringcomprising a plurality of adjacent, mutually adhered regions, at leastsome of which comprise a dielectric material.
 2. The semiconductordevice component of claim 1, wherein the at least one ring is configuredto laterally support at least a base portion of a conductive structuresecurable to the at least one contact pad.
 3. The semiconductor deviceof claim 2, wherein the at least one ring comprises an apertureconfigured to contact at least a portion of a surface of the conductivestructure securable to the at least one contact pad.
 4. Thesemiconductor device of claim 1, wherein each of the plurality ofadjacent, mutually adhered regions comprises dielectric material.
 5. Thesemiconductor device of claim 1, wherein at least some of the pluralityof adjacent, mutually adhered regions comprise a photopolymer.
 6. Thesemiconductor device of claim 5, wherein at least a portion of thephotopolymer is at least semisolid.
 7. The semiconductor device of claim1, wherein at least some of the plurality of adjacent, mutually adheredregions comprise at least partially superimposed, contiguous layers. 8.The semiconductor device of claim 1, wherein the substrate comprises anat least partial semiconductor wafer including a plurality ofsemiconductor dice.
 9. The semiconductor device of claim 1, wherein thesubstrate comprises a semiconductor die.
 10. The semiconductor device ofclaim 1, wherein the substrate comprises a chip-scale package.
 11. Thesemiconductor device of claim 1, wherein the substrate comprises acarrier substrate.
 12. The semiconductor device of claim 1, furthercomprising: a conductive structure secured to the at least one contactpad.
 13. A support ring positionable proximate to a contact pad of asemiconductor device such that, upon attachment of the support ring to asurface of the semiconductor device, at least a portion of the contactpad will be exposed therethrough, the support ring including a pluralityof adjacent, mutually adhered regions, at least some of which comprise adielectric material.
 14. The support ring of claim 13, wherein at leastsome of the regions are configured to laterally support at least a baseportion of a conductive structure securable to the contact pad.
 15. Thesupport ring of claim 13, wherein each of the plurality of adjacent,mutually adhered regions comprises dielectric material.
 16. The supportring of claim 13, wherein at least some of the plurality of adjacent,mutually adhered regions comprise dielectric photopolymer.
 17. Thesupport ring of claim 13, wherein at least some of the plurality ofadjacent, mutually adhered regions comprise at least partiallysuperimposed, contiguous, mutually adhered layers.
 18. The support ringof claim 13, comprising an aperture configured to contact a surface ofthe conductive structure.
 19. A semiconductor device component,comprising: a substrate including at least one contact pad exposed at asurface thereof; and at least one ring positioned on the substrate withat least a portion of the at least one contact pad exposed therethrough,the at least one ring comprising a plurality of adjacent, mutuallyadhered regions, at least some of which comprise a photopolymer.
 20. Asupport ring positionable proximate to a contact pad of a semiconductordevice such that, upon attachment of the support to the semiconductordevice, at least a portion of the contact pad will be exposedtherethrough, the support ring including a plurality of adjacent,mutually adhered regions, at least some of which comprise photopolymer.